FDC640P
ActiveON Semiconductor
P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED, -20V, -4.5A, 53MΩ
FDC640P
ActiveON Semiconductor
P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED, -20V, -4.5A, 53MΩ
Description
General part information
FDC640P Series
This P-Channel 2.5V specified MOSFET uses a rugged gate version of an advanced PowerTrench®process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Technical Specifications
Parameters and characteristics for this part
| Specification | FDC640P |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 13 nC |
| Input Capacitance (Ciss) (Max) | 890 pF, 890 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Package Name | SuperSOT™-6 |
| Power Dissipation (Max) | 1.6 W |
| Rds On (Max) | 53 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 1.5 V |
Pricing
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CAD
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