2PA1015GR,126

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NXP USA Inc.

TRANS PNP 50V 0.15A TO92-3

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Active

NXP USA Inc.

TRANS PNP 50V 0.15A TO92-3

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	2PA1015GR,126	2PA10 Series

Current - Collector (Ic) (Max) [Max]	150 mA	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE	200 hFE
DC Current Gain (hFE) (Min) @ Ic, Vce	-	120
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3
Power - Max [Max]	500 mW	500 mW
Supplier Device Package	TO-92-3	TO-92-3
Transistor Type	PNP	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V	50 V

TRANS PNP 50V 0.15A TO92-3

Part	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Supplier Device Package	Transistor Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce
NXP USA Inc. 2PA1015Y,126	150 °C	120	TO-226-3, TO-92-3	150 mA	100 nA	500 mW	TO-92-3	PNP	Through Hole	50 V
NXP USA Inc. 2PA1015GR,126	150 °C		TO-226-3, TO-92-3	150 mA	100 nA	500 mW	TO-92-3	PNP	Through Hole	50 V	200 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 500 mW Through Hole TO-92-3

Technical documentation and resources