IRF8910TRPBF

Active

Infineon Technologies

IR MOSFET™ N+N DUAL POWER MOSFET ; SO-8 PACKAGE; 13.4 MOHM;

Search across all available documentation for this part.

Active

Infineon Technologies

IR MOSFET™ N+N DUAL POWER MOSFET ; SO-8 PACKAGE; 13.4 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF8910TRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	960 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	13.4 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.55 V

Part	Power - Max [Max]	Drain to Source Voltage (Vdss)	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IRF8915	2 W	20 V	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	Surface Mount	8-SO	MOSFET (Metal Oxide)	-55 °C	150 °C	18.3 mOhm	7.4 nC	2.5 V	540 pF	8.9 A	2 N-Channel (Dual)
Infineon Technologies IRF8910GPBF	2 W	20 V	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	Surface Mount	8-SO	MOSFET (Metal Oxide)	-55 °C	150 °C	13.4 mOhm		2.55 V	960 pF	10 A	2 N-Channel (Dual)	11 nC
Infineon Technologies IRF8910TRPBF-1	2 W	20 V		8-SOIC	3.9 mm	0.154 in	Surface Mount	8-SO	MOSFET (Metal Oxide)	-55 °C	150 °C	13.4 mOhm		2.55 V	960 pF	10 A	2 N-Channel (Dual)	11 nC
Infineon Technologies IRF8910TRPBF	2 W	20 V	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	Surface Mount	8-SO	MOSFET (Metal Oxide)	-55 °C	150 °C	13.4 mOhm		2.55 V	960 pF	10 A	2 N-Channel (Dual)	11 nC
Infineon Technologies IRF8910PBF	2 W	20 V	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	Surface Mount	8-SO	MOSFET (Metal Oxide)	-55 °C	150 °C	13.4 mOhm		2.55 V	960 pF	10 A	2 N-Channel (Dual)	11 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 10A 2W Surface Mount 8-SO

Technical documentation and resources