IRFS38N20DTRLP

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Infineon Technologies

MOSFET, N-CH, 200V, 43A, TO-263 ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CH, 200V, 43A, TO-263 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS38N20DTRLP

Current - Continuous Drain (Id) @ 25°C	43 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	91 nC
Input Capacitance (Ciss) (Max) @ Vds	2900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	300 W, 3.8 W
Rds On (Max) @ Id, Vgs [Max]	54 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]
Infineon Technologies IRFS38N20DTRLP	20 V	43 A	MOSFET (Metal Oxide)	5 V	3.8 W 300 W	2900 pF	Surface Mount	-55 °C	175 ░C	D2PAK	10 V	200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	54 mOhm	N-Channel	91 nC

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