BUJD203AD,118

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WeEn Semiconductors

TRANS GP BJT NPN 425V 4A 80000MW 3-PIN(2+TAB) DPAK T/R

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WeEn Semiconductors

TRANS GP BJT NPN 425V 4A 80000MW 3-PIN(2+TAB) DPAK T/R

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General part information

Bipolar (BJT) Transistor NPN 425 V 4 A 80 W Surface Mount DPAK

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Specification	BUJD203AD,118	BUJD2 Series

Current - Collector (Ic) (Max) [Max]	4 A	4 A
Current - Collector Cutoff (Max)	-	2 mA
Current - Collector Cutoff (Max) [Max]	100 µA	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	11	10 - 11
Mounting Type	Surface Mount	Through Hole, Surface Mount
Operating Temperature	150 °C	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3	TO-220-3 Full Pack, Isolated Tab, SC-63, DPAK (2 Leads + Tab), TO-252-3, TO-220-3
Power - Max [Max]	80 W	26 - 80 W
Supplier Device Package	DPAK	TO-220F, DPAK, TO-220AB
Transistor Type	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	425 V	425 V

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max)	Transistor Type	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]
WeEn Semiconductors BUJD203AX,127	425 V	10	2 mA	NPN	TO-220-3 Full Pack, Isolated Tab	Through Hole	4 A	TO-220F	150 °C	26 W
WeEn Semiconductors BUJD203AD,118	425 V	11		NPN	DPAK (2 Leads + Tab), SC-63, TO-252-3	Surface Mount	4 A	DPAK	150 °C	80 W	100 µA
WeEn Semiconductors BUJD203A,127	425 V	11		NPN	TO-220-3	Through Hole	4 A	TO-220AB	150 °C	80 W	100 µA