STU7NM60N

Active

STMicroelectronics

N-CHANNEL 600 V, 0.8 OHM TYP., 5 A MDMESH II POWER MOSFET IN IPAK PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Datasheet +17

STU7NM60N

Active

STMicroelectronics

N-CHANNEL 600 V, 0.8 OHM TYP., 5 A MDMESH II POWER MOSFET IN IPAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet Datasheet +17

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STU7NM60N

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	363 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STU7NM60 Series

N-channel 600 V, 0.8 Ohm typ., 5 A MDmesh II Power MOSFET in IPAK package

Part	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Package / Case	FET Type
STMicroelectronics STU7NM60N	Through Hole	600 V	5 A	MOSFET (Metal Oxide)	363 pF	10 V	900 mOhm	25 V	4 V	TO-251 (IPAK)	45 W	14 nC	150 °C	IPAK, TO-251-3 Short Leads, TO-251AA	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.11
		75	$ 1.69
		150	$ 1.39
		525	$ 1.18
		1050	$ 1.00
		2025	$ 0.95
		5025	$ 0.92
		10050	$ 0.88

Description

General part information

STU7NM60 Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources

Datasheet

STU7NM60N

Deep-Dive with AI

STU7NM60N

Deep-Dive with AI

Technical Specifications

STU7NM60 Series

Pricing

Description

STU7NM60 Series

Documents

Datasheet

Datasheet

AN2344

TN1225

DS6523

AN4250

TN1156

UM1575

TN1378

AN2842

AN4337

TN1224

Technical Specifications

STU7NM60 Series