BYC20DX-600PQ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 20A TO220F

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 20A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	BYC20DX-600PQ

Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	20 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220F
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.9 V

Part	Speed	Operating Temperature - Junction	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Mounting Type	Operating Temperature - Junction [Max]
WeEn Semiconductors Co., Ltd BYC20X-600,127	200 mA 500 ns	150 °C	TO-220FP	TO-220-2 Full Pack Isolated Tab	500 V	Standard	2.9 V	200 µA	55 ns	Through Hole
WeEn Semiconductors Co., Ltd BYC20D-600PQ	200 mA 500 ns		TO-220AC	TO-220-2	600 V	Standard	2.9 V	10 µA	20 ns	Through Hole	175 °C
WeEn Semiconductors Co., Ltd BYC20DX-600PQ	200 mA 500 ns		TO-220F	TO-220-2 Full Pack Isolated Tab	600 V	Standard	2.9 V	10 µA	20 ns	Through Hole	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 20A Through Hole TO-220F

Technical documentation and resources

No documents available