IRFHM4231TRPBF

Obsolete

Infineon Technologies

MOSFET N-CH 25V 40A 8PQFN

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Obsolete

Infineon Technologies

MOSFET N-CH 25V 40A 8PQFN

Technical Specifications

Parameters and characteristics for this part

Specification	IRFHM4231TRPBF

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1270 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	29 W, 2.7 W
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	8-PQFN (3x3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	FET Type	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)
Infineon Technologies IRFHM4231TRPBF	N-Channel	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 nC	4.5 V 10 V	1270 pF	20 V	8-PowerTDFN	8-PQFN (3x3)	25 V	3.4 mOhm	2.1 V	2.7 W 29 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 40A (Tc) 2.7W (Ta), 29W (Tc) Surface Mount 8-PQFN (3x3)

Technical documentation and resources