IRF8304MTRPBF
ObsoleteInfineon Technologies
STRONGIRFET™ N-CHANNEL ; DIRECTFET™ M PACKAGE; 2.2 MOHM;
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IRF8304MTRPBF
ObsoleteInfineon Technologies
STRONGIRFET™ N-CHANNEL ; DIRECTFET™ M PACKAGE; 2.2 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF8304MTRPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 28 A, 170 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | DirectFET™ Isometric MX |
| Power Dissipation (Max) [Max] | 100 W, 2.8 W |
| Rds On (Max) @ Id, Vgs | 2.2 mOhm |
| Supplier Device Package | DirectFET™ Isometric MX |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.35 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IRF8304 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Documents
Technical documentation and resources