SUP50020EL-GE3

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Vishay Siliconix

MOSFET N-CH 60V 120A TO220AB

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Vishay Siliconix

MOSFET N-CH 60V 120A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP50020EL-GE3

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	126 nC
Input Capacitance (Ciss) (Max) @ Vds	11113 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2.3 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

MOSFET N-CH 60V 120A TO220AB

Part	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
Vishay Siliconix SUP50020EL-GE3	2.3 mOhm	N-Channel	-55 °C	175 ░C	20 V	2.5 V	MOSFET (Metal Oxide)	126 nC	TO-220-3	4.5 V, 10 V	11113 pF	Through Hole	TO-220AB	60 V	120 A	375 W

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General part information

N-Channel 60 V 120A (Tc) 375W (Tc) Through Hole TO-220AB

Technical documentation and resources