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NGTB15N135IHRWG

NGTB15N135IHRWG

Obsolete
ON Semiconductor

TRANS IGBT CHIP N-CH 1350V 30A 357W 3-PIN(3+TAB) TO-247 TUBE

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NGTB15N135IHRWG

NGTB15N135IHRWG

Obsolete
ON Semiconductor

TRANS IGBT CHIP N-CH 1350V 30A 357W 3-PIN(3+TAB) TO-247 TUBE

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Description

General part information

NGTB15N135IHRWG

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS)Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationNGTB15N135IHRWG
Current - Collector (Ic) (Max)30 A
Current - Collector Pulsed (Icm)60 A
Gate Charge156 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseTO-247-3
Package NameTO-247-3
Power - Max357 W
Switching Energy420 µJ
Switching Energy (Off)420 µJ
Td (off) @ 25°C170 ns
Test Condition Current15 A
Test Condition Resistance10 Ohm
Test Condition Voltage600 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)2.65 V
Voltage - Collector Emitter Breakdown (Max)1350 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources