FDG6301N
ObsoleteDUAL MOSFET, DUAL N CHANNEL, 220 MA, 25 V, 4 OHM, 4.5 V, 850 MV ROHS COMPLIANT: YES
FDG6301N
ObsoleteDUAL MOSFET, DUAL N CHANNEL, 220 MA, 25 V, 4 OHM, 4.5 V, 850 MV ROHS COMPLIANT: YES
Description
General part information
FDG6301N Series
These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDG6301N |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 220 mA |
| Drain to Source Voltage (Vdss) | 25 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 0.4 nC |
| Input Capacitance (Ciss) (Max) | 9.5 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | SC-88 (SC-70-6) |
| Power - Max | 300 mW |
| Rds On (Max) | 4 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.5 V |
Pricing
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CAD
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