IRFP4368PBF

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Infineon Technologies

MOSFET N-CH 75V 195A TO247AC

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Unknown

Infineon Technologies

MOSFET N-CH 75V 195A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP4368PBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	570 nC
Input Capacitance (Ciss) (Max) @ Vds	19230 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	520 W
Rds On (Max) @ Id, Vgs	1.85 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package
Infineon Technologies IRFP4368PBF	4 V	19230 pF	MOSFET (Metal Oxide)	195 A	-55 °C	175 ░C	N-Channel	1.85 mOhm	TO-247-3	Through Hole	10 V	570 nC	520 W	75 V	20 V	TO-247AC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly