IRF8302MTRPBF

Obsolete

Infineon Technologies

TRANS MOSFET N-CH 30V 31A 7-PIN DIRECT-FET MX T/R

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Obsolete

Infineon Technologies

TRANS MOSFET N-CH 30V 31A 7-PIN DIRECT-FET MX T/R

Technical Specifications

Parameters and characteristics for this part

Specification	IRF8302MTRPBF

Current - Continuous Drain (Id) @ 25°C	190 A, 31 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	53 nC
Input Capacitance (Ciss) (Max) @ Vds	6030 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MX
Power Dissipation (Max)	104 W, 2.8 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	DIRECTFET™ MX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IRF8302MTRPBF	6030 pF	30 V	20 V	Surface Mount	2.8 W 104 W	2.35 V	4.5 V 10 V	1.8 mOhm	MOSFET (Metal Oxide)	DirectFET™ Isometric MX	DIRECTFET™ MX	53 nC	150 °C	-40 °C	N-Channel	31 A 190 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 31A (Ta), 190A (Tc) 2.8W (Ta), 104W (Tc) Surface Mount DIRECTFET™ MX

Technical documentation and resources