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DMP2006UFGQ-7

DMP2006UFGQ-7

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Diodes Inc

20V P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP2006UFGQ-7

DMP2006UFGQ-7

Active
Diodes Inc

20V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

General part information

DMP2006UFGQ Series

20V P-Channel Enhancement Mode MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP2006UFGQ-7
Current - Continuous Drain (Id) (Ta)17.5 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)1.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)200 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)7500 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerVDFN
Package NamePOWERDI3333-8
Power Dissipation (Max)41 W, 2.3 W
QualificationAEC-Q101
Rds On (Max)5.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max)1 V

Pricing

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CAD

3D models and CAD resources for this part