FDT457N
ActivePOWER MOSFET, N CHANNEL, 30 V, 5 A, 0.06 OHM, SOT-223, SURFACE MOUNT
FDT457N
ActivePOWER MOSFET, N CHANNEL, 30 V, 5 A, 0.06 OHM, SOT-223, SURFACE MOUNT
Description
General part information
FDT457N
The FDT457N is a 30V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. It is well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits and DC motor control. This product is general usage and suitable for many different applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDT457N |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 5.9 nC |
| Input Capacitance (Ciss) (Max) | 235 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | SOT-223-4 |
| Power Dissipation (Max) | 3 W |
| Rds On (Max) | 60 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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