STW80NF55-08

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STMicroelectronics

MOSFET N-CH 55V 80A TO247-3

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STMicroelectronics

MOSFET N-CH 55V 80A TO247-3

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW80NF55-08	STW80N Series

Drain to Source Voltage (Vdss)	55 V	55 - 60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC	150 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3850 pF	3850 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	-	175 °C
Operating Temperature [Max]	175 ░C	175 ░C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max) [Max]	300 W	300 W
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 V
Vgs(th) (Max) @ Id	4 V	4 V

MOSFET N-CH 55V 80A TO247-3

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Package / Case	Supplier Device Package	Operating Temperature
STMicroelectronics STW80NF55-08	150 nC	Through Hole	10 V	20 V	MOSFET (Metal Oxide)	55 V	N-Channel	-55 °C	175 ░C	4 V	3850 pF	300 W	TO-247-3	TO-247-3
STMicroelectronics STW80NF06	150 nC	Through Hole	10 V	20 V	MOSFET (Metal Oxide)	60 V	N-Channel			4 V	3850 pF	300 W	TO-247-3	TO-247-3	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole TO-247-3

Technical documentation and resources