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IRFB4227PBF - INFINEON IRFB4227PBF

IRFB4227PBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 200 V, 65 A, 0.0197 OHM, TO-220AB, THROUGH HOLE

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IRFB4227PBF - INFINEON IRFB4227PBF

IRFB4227PBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 200 V, 65 A, 0.0197 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB4227PBF
Current - Continuous Drain (Id) @ 25°C65 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs98 nC
Input Capacitance (Ciss) (Max) @ Vds4600 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseTO-220-3
Power Dissipation (Max)330 W
Rds On (Max) @ Id, Vgs [Max]24 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.25
10$ 2.80
100$ 1.98
500$ 1.63
1000$ 1.52
NewarkEach 1$ 3.54
10$ 2.93
100$ 1.92
500$ 1.63
1000$ 1.57

Description

General part information

IRFB4227 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.