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DMP1012USSQ-13

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Diodes Inc

12V P-CHANNEL ENHANCEMENT MODE MOSFET

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Package Image for SO-8

DMP1012USSQ-13

Active
Diodes Inc

12V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

General part information

DMP1012USSQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, backlighting, power management functions, and DC-DC converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP1012USSQ-13
Current - Continuous Drain (Id) (Ta)8.5 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On)1.8 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)31 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)1344 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SO, 8-SOIC
Package Width3.9 mm
Power Dissipation (Max)1.3 W
QualificationAEC-Q101
Rds On (Max)13.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part