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STPSC2H065B-TR - STMICROELECTRONICS STD10N60M2

STPSC2H065B-TR

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 2 A, 7.9 NC, TO-252 (DPAK)

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STPSC2H065B-TR - STMICROELECTRONICS STD10N60M2

STPSC2H065B-TR

Active
STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 2 A, 7.9 NC, TO-252 (DPAK)

Deep-Dive with AI

DocumentsDatasheet+11

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.47
10$ 1.20
100$ 0.94
500$ 0.79
1000$ 0.65
Digi-Reel® 1$ 1.47
10$ 1.20
100$ 0.94
500$ 0.79
1000$ 0.65
Tape & Reel (TR) 2500$ 0.61
5000$ 0.58
12500$ 0.55

Description

General part information

STPSC2H065 Series

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC2H065 SiC diode will boost performance in hard switching conditions.