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BSS63LT1G

BSS63LT1G

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ON Semiconductor

TRANS GP BJT PNP 100V 0.1A 3-PIN SOT-23 T/R

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BSS63LT1G

BSS63LT1G

Active
ON Semiconductor

TRANS GP BJT PNP 100V 0.1A 3-PIN SOT-23 T/R

Find alt

Description

General part information

BSS63LT1G

The SOT-23 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die

Available in 12 mm Tape and Reel Use BSP52T1 to order the 7 inch/1000 unit r

Technical Specifications

Parameters and characteristics for this part

SpecificationBSS63LT1G
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)30
Frequency - Transition95 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3 (TO-236)
Power - Max225 mW
Transistor TypePNP
Vce Saturation (Max)250 mV
Voltage - Collector Emitter Breakdown (Max)100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part