IRFR9024NTRLPBF

Active

Infineon Technologies

MOSFET, P-CH, 55V, 11A, TO-252AA ROHS COMPLIANT: YES

Search across all available documentation for this part.

Active

Infineon Technologies

MOSFET, P-CH, 55V, 11A, TO-252AA ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR9024NTRLPBF

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	175 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs
Infineon Technologies IRFR9024NTRLPBF	11 A	19 nC	P-Channel	55 V	10 V	38 W	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA (DPAK)	4 V	20 V	350 pF	175 mOhm
Infineon Technologies IRFR9024NTRPBF	11 A	19 nC	P-Channel	55 V	10 V	38 W	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA (DPAK)	4 V	20 V	350 pF	175 mOhm
Infineon Technologies IRFR9024NTRL	11 A	19 nC	P-Channel	55 V	10 V	38 W	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA (DPAK)	4 V	20 V	350 pF	175 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly