IRFS4410TRLPBF

Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 10 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 10 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS4410TRLPBF

Current - Continuous Drain (Id) @ 25°C	88 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	5150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	200 W
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
Infineon Technologies IRFS4410TRLPBF	20 V	88 A	MOSFET (Metal Oxide)	10 V	Surface Mount	100 V	N-Channel	-55 °C	175 ░C	180 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 W	5150 pF	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 88A (Tc) 200W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources