IRFSL3107PBF

Obsolete

Infineon Technologies

MOSFET N-CH 75V 195A TO262

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 75V 195A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	IRFSL3107PBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	240 nC
Input Capacitance (Ciss) (Max) @ Vds	9370 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	370 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)
Infineon Technologies IRFSL3107PBF	-55 °C	175 ░C	Through Hole	75 V	370 W	TO-262	10 V	I2PAK TO-262-3 Long Leads TO-262AA	9370 pF	195 A	MOSFET (Metal Oxide)	N-Channel	4 V	3 mOhm	240 nC	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$