EM 1BV0
ActiveSanken Electric USA Inc.
DIODE GEN PURP 800V 1A AXIAL
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EM 1BV0
ActiveSanken Electric USA Inc.
DIODE GEN PURP 800V 1A AXIAL
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | EM 1BV0 |
|---|---|
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 20 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | Axial |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.05 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
EM 1BV0
Diode 800 V 1A Through Hole
Documents
Technical documentation and resources