DMP68D1LQ-7
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
DMP68D1LQ-7
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMP68D1LQ-7
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, power-management functions, and backlighting.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP68D1LQ-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 206 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 0.6 nC |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power Dissipation (Max) | 500 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 7.5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.1 V |
Pricing
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CAD
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