ISZ0804NLSATMA1
OPTIMOS™ PD POWER MOSFET ISZ0804NLS IN THE PQFN 3.3X3.3 PACKAGE OFFERS FAST RAMP-UP AND OPTIMIZED LEAD TIMES.
Deep-Dive with AI
Search across all available documentation for this part.
ISZ0804NLSATMA1
OPTIMOS™ PD POWER MOSFET ISZ0804NLS IN THE PQFN 3.3X3.3 PACKAGE OFFERS FAST RAMP-UP AND OPTIMIZED LEAD TIMES.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ISZ0804NLSATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A, 58 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 2.1 W, 60 W |
| Rds On (Max) @ Id, Vgs | 11.5 mOhm |
| Supplier Device Package | PG-TSDSON-8-26 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.99 | |
| 10 | $ 1.27 | |||
| 100 | $ 0.86 | |||
| Digi-Reel® | 1 | $ 1.99 | ||
| 10 | $ 1.27 | |||
| 100 | $ 0.86 | |||
| Tape & Reel (TR) | 5000 | $ 0.54 | ||
Description
General part information
ISZ0804N Series
OptiMOS™ PD power MOSFETis Infineon’s portfolio targetingUSB-PDandadapter applications. ISZ0804NLS in PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction.OptiMOS™ PDfeatures quality products in compact, lightweight packages.
Documents
Technical documentation and resources