IRFS4510TRLPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 13.9 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 13.9 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS4510TRLPBF

Current - Continuous Drain (Id) @ 25°C	61 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	87 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3180 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	13.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type
Infineon Technologies IRFS4510TRLPBF	MOSFET (Metal Oxide)	3180 pF	-55 °C	175 ░C	140 W	10 V	61 A	Surface Mount	13.9 mOhm	100 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	87 nC	20 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 61A (Tc) 140W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources