IRFSL7730PBF

Obsolete

Infineon Technologies

IRFSL7730 - 12V-300V N-CHANNEL P

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Obsolete

Infineon Technologies

IRFSL7730 - 12V-300V N-CHANNEL P

Technical Specifications

Parameters and characteristics for this part

Specification	IRFSL7730PBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	407 nC
Input Capacitance (Ciss) (Max) @ Vds	13660 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Technology	FET Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs
Infineon Technologies IRFSL7730PBF	407 nC	20 V	13660 pF	195 A	-55 °C	175 ░C	6 V 10 V	Through Hole	75 V	MOSFET (Metal Oxide)	N-Channel	375 W	3.7 V	TO-262	I2PAK TO-262-3 Long Leads TO-262AA	2.6 mOhm
Infineon Technologies IRFSL7730PBF	407 nC	20 V	13660 pF	195 A	-55 °C	175 ░C	6 V 10 V	Through Hole	75 V	MOSFET (Metal Oxide)	N-Channel	375 W	3.7 V	TO-262	I2PAK TO-262-3 Long Leads TO-262AA	2.6 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly