MJD350G
ObsoleteON Semiconductor
0.5 A, 300 V HIGH VOLTAGE PNP BIPOLAR POWER TRANSISTOR
MJD350G
ObsoleteON Semiconductor
0.5 A, 300 V HIGH VOLTAGE PNP BIPOLAR POWER TRANSISTOR
Description
General part information
MJD350G
The PNP Bipolar Power Transistor is designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD350G |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100 µA |
| DC Current Gain (hFE) (Min) | 30 |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power - Max | 15 W |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
Pricing
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CAD
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Documents
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