STW33N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.108 OHM TYP., 26 A MDMESH M2 POWER MOSFETS IN TO-247 PACKAGE

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DocumentsDatasheet AN4337 +27

STW33N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.108 OHM TYP., 26 A MDMESH M2 POWER MOSFETS IN TO-247 PACKAGE

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DocumentsDatasheet AN4337 +27

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW33N60M2

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1781 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STW33 Series

N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-247 package

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STW33N60M2	125 mOhm	4 V	45.5 nC	-55 °C	150 °C	26 A	25 V	600 V	190 W	Through Hole	TO-247-3	10 V	TO-247-3	N-Channel	MOSFET (Metal Oxide)	1781 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.97
		30	$ 3.94
		120	$ 3.38
		510	$ 3.00
		1020	$ 2.57
		2010	$ 2.42
Newark	Each	1	$ 7.28
		10	$ 5.99
		25	$ 4.70
		50	$ 4.42
		100	$ 4.13
		250	$ 3.72

Description

General part information

STW33 Series

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

STW33N60M2

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STW33N60M2

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Technical Specifications

STW33 Series

Pricing

Description

STW33 Series

Documents

Datasheet

AN4337

TN1156

AN2344

AN5318

AN4720

AN4250

UM1575

AN4829

TN1378

TN1224

AN4742

AN2842

AN4406

TN1225

DS9497

Datasheet

Product Change Notice EN

Technical Specifications

STW33 Series