IRFHE4250DTRPBF

Obsolete

Infineon Technologies

MOSFET 2N-CH 25V 86A/303A 32QFN

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Obsolete

Infineon Technologies

MOSFET 2N-CH 25V 86A/303A 32QFN

Technical Specifications

Parameters and characteristics for this part

Specification	IRFHE4250DTRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	303 A, 86 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1735 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	32-PowerWFQFN
Power - Max [Max]	156 W
Rds On (Max) @ Id, Vgs	2.75 mOhm, 0.9 mOhm
Supplier Device Package	32-PQFN (6x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Configuration	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IRFHE4250DTRPBF	Surface Mount	1735 pF	86 A 303 A	156 W	0.9 mOhm 2.75 mOhm	32-PowerWFQFN	2.1 V	MOSFET (Metal Oxide)	25 V	32-PQFN (6x6)	-55 °C	150 °C	20 nC	Logic Level Gate	2 N-Channel (Dual)
Infineon Technologies IRFHE4250DTRPBF	Surface Mount	1735 pF 4765 pF	86 A 303 A	156 W	0.9 mOhm 2.75 mOhm	32-PowerVFQFN	2.1 V 2.1 V	MOSFET (Metal Oxide)	25 V	32-PQFN (6x6)	-55 °C	150 °C	20 nC		2 N-Channel (Dual)	53 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 25V 86A (Tc), 303A (Tc) 156W (Tc) Surface Mount 32-PQFN (6x6)

Technical documentation and resources