PU1DMH

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Taiwan Semiconductor Corporation

25NS, 1A, 200V, ULTRA FAST RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

25NS, 1A, 200V, ULTRA FAST RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	PU1DMH

Capacitance @ Vr, F	18 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	2-SMD, Flat Leads
Qualification	AEC-Q101
Reverse Recovery Time (trr)	36 ns
Speed	200 mA, 500 ns
Supplier Device Package	Micro SMA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.05 V

Part	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Package / Case	Qualification	Mounting Type	Grade	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology	Speed
Taiwan Semiconductor Corporation PU1DMH	1 µA	36 ns	200 V	175 ░C	-55 C	1 A	18 pF	2-SMD Flat Leads	AEC-Q101	Surface Mount	Automotive	Micro SMA	1.05 V	Standard	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 1A Surface Mount Micro SMA

Technical documentation and resources