DMG6301UDW-13

Active

Diodes Inc

MOSFET 2N-CH 25V 0.24A SOT363

Search across all available documentation for this part.

Active

Diodes Inc

MOSFET 2N-CH 25V 0.24A SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	DMG6301UDW-13

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	240 mA
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Qg) (Max) @ Vgs [Max]	0.36 nC
Input Capacitance (Ciss) (Max) @ Vds	27.9 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

N-Channel MOSFET

Part	Configuration	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type
Diodes Inc DMG6301UDW-13	2 N-Channel (Dual)	6-TSSOP SC-88 SOT-363	27.9 pF	4 Ohm	240 mA	MOSFET (Metal Oxide)	-55 °C	150 °C	300 mW	SOT-363	1.5 V	0.36 nC	25 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel MOSFET

Technical documentation and resources