S1MB

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Taiwan Semiconductor Corporation

DIODE GEN PURP 1A DO214AA

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Taiwan Semiconductor Corporation

DIODE GEN PURP 1A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	S1MB

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Supplier Device Package
Taiwan Semiconductor Corporation S1MB R5G	DO-214AA SMB	1000 V	Standard	Standard Recovery >500ns	200 mA	1.1 V	150 °C	-55 °C	1 A	Surface Mount	5 µA	SMB	DO-214AA
Taiwan Semiconductor Corporation S1MB	DO-214AA SMB	1000 V	Standard	Standard Recovery >500ns	200 mA	1.1 V	150 °C	-55 °C	1 A	Surface Mount	5 µA	SMB	DO-214AA

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General part information

Diode 1000 V 1A Surface Mount DO-214AA (SMB)

Technical documentation and resources