TP0606N3-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V, 2.0 OHM
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TP0606N3-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V, 2.0 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TP0606N3-G | TP0606 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 320 mA | 320 mA |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V | 5 V |
| FET Type | P-Channel | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF | 150 pF |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | 1 W | 1 W |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm | 3.5 Ohm |
| Supplier Device Package | TO-92-3 | TO-92-3 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2.4 V | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bag | 1 | $ 1.11 | |
| 25 | $ 0.91 | |||
| 100 | $ 0.83 | |||
| Microchip Direct | BAG | 1 | $ 1.11 | |
| 25 | $ 0.91 | |||
| 100 | $ 0.83 | |||
| 1000 | $ 0.71 | |||
| 5000 | $ 0.64 | |||
| 10000 | $ 0.59 | |||
TP0606 Series
MOSFET, P-Channel Enhancement-Mode, -40V, 2.0 Ohm
| Part | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Mounting Type | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Technology | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TP0606N3-G | 60 V | P-Channel | TO-226-3, TO-92-3 | 20 V | 10 V | 5 V | Through Hole | 3.5 Ohm | -55 °C | 150 °C | TO-92-3 | 1 W | 2.4 V | MOSFET (Metal Oxide) | 320 mA | 150 pF |
Microchip Technology TP0606N3-G | ||||||||||||||||
Microchip Technology TP0606N3-G-P002 | 60 V | P-Channel | TO-226-3, TO-92-3 | 20 V | 10 V | 5 V | Through Hole | 3.5 Ohm | -55 °C | 150 °C | TO-92-3 | 1 W | 2.4 V | MOSFET (Metal Oxide) | 320 mA | 150 pF |
Description
General part information
TP0606 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources