FQE10N20CTU
ObsoleteON Semiconductor
MOSFET N-CH 200V 4A TO126-3
FQE10N20CTU
ObsoleteON Semiconductor
MOSFET N-CH 200V 4A TO126-3
Description
General part information
FQE10N20CTU
N-Channel 200 V 4A (Tc) 12.8W (Tc) Through Hole TO-126-3
Technical Specifications
Parameters and characteristics for this part
| Specification | FQE10N20CTU |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 4 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 26 nC |
| Input Capacitance (Ciss) (Max) | 510 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Package Name | TO-126-3 |
| Power Dissipation (Max) | 12.8 W |
| Rds On (Max) | 360 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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