FDP036N10A
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 100 V, 120 A, 0.0032 OHM, TO-220AB, THROUGH HOLE
FDP036N10A
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 100 V, 120 A, 0.0032 OHM, TO-220AB, THROUGH HOLE
Description
General part information
FDP036N10A Series
This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDP036N10A |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 120 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 116 nC |
| Input Capacitance (Ciss) (Max) | 7295 pF, 7295 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 155 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220-3 |
| Power Dissipation (Max) | 333 W |
| Rds On (Max) | 3.6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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