NCP5111PG
ObsoleteON Semiconductor
POWER MOSFET / IGBT DRIVER, SINGLE INPUT, HALF-BRIDGE
NCP5111PG
ObsoleteON Semiconductor
POWER MOSFET / IGBT DRIVER, SINGLE INPUT, HALF-BRIDGE
Description
General part information
NCP5111PG
The NCP5111 is a High Voltage Power gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration.It uses the bootstrap technique to insure a proper drive of the High-side power switch.
Technical Specifications
Parameters and characteristics for this part
| Specification | NCP5111PG |
|---|---|
| Channel Type | Synchronous |
| Current - Peak Output (Sink) | 500 mA |
| Current - Peak Output (Source) | 250 mA |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 35 ns |
| Gate Channel | N-Channel |
| Gate Type | IGBT, MOSFET |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIH | 2.3 V |
| Logic Voltage - VIL | 0.8 V |
| Mounting Type | Through Hole |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.3 in |
| Package Name | 8-PDIP, 8-DIP |
| Package Width | 7.62 mm |
| Rise Time (Typ) | 85 ns |
| Voltage - Supply (Maximum) | 20 V |
| Voltage - Supply (Minimum) | 10 VDC |
Pricing
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CAD
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Documents
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