7164L55TDB

Active

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT PARALLEL 28CDIP

Search across all available documentation for this part.

Active

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT PARALLEL 28CDIP

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	7164L55TDB	7164L Series

Access Time	55 ns	20 - 70 ns
Memory Format	SRAM	SRAM
Memory Interface	Parallel	Parallel
Memory Organization	8 K	8 K
Memory Size	64 Kbit	64 Kbit
Memory Type	Volatile	Volatile
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature	-	70 °C
Operating Temperature	-	0 °C
Operating Temperature [Max]	125 °C	125 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	7.62 mm	7.62 mm
Package / Case	0.3 in	0.3 - 7.62 in
Package / Case	28-CDIP	28-CDIP, 28-BSOJ
Package / Case	-	0.3 in
Supplier Device Package	28-CDIP	28-CDIP, 28-SOJ
Technology	SRAM - Asynchronous	SRAM - Asynchronous
Voltage - Supply [Max]	5.5 V	5.5 V
Voltage - Supply [Min]	4.5 V	4.5 V
Write Cycle Time - Word, Page	-	20 ns
Write Cycle Time - Word, Page [custom]	55 ns	55 ns
Write Cycle Time - Word, Page [custom]	55 ns	55 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	13	$ 25.71

IC SRAM 64KBIT PARALLEL 28CDIP

Part	Memory Format	Operating Temperature [Max]	Operating Temperature [Min]	Access Time	Package / Case	Package / Case	Package / Case	Memory Interface	Memory Type	Memory Size	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Organization	Technology	Mounting Type	Write Cycle Time - Word, Page	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case
IDT, Integrated Device Technology Inc 7164L70TDB	SRAM	125 °C	-55 °C	70 ns	7.62 mm	0.3 in	28-CDIP	Parallel	Volatile	64 Kbit	28-CDIP	4.5 V	5.5 V	8 K	SRAM - Asynchronous	Through Hole
IDT, Integrated Device Technology Inc 7164L20TDB	SRAM	125 °C	-55 °C	20 ns	7.62 mm	0.3 in	28-CDIP	Parallel	Volatile	64 Kbit	28-CDIP	4.5 V	5.5 V	8 K	SRAM - Asynchronous	Through Hole	20 ns
IDT, Integrated Device Technology Inc 7164L55TDB	SRAM	125 °C	-55 °C	55 ns	7.62 mm	0.3 in	28-CDIP	Parallel	Volatile	64 Kbit	28-CDIP	4.5 V	5.5 V	8 K	SRAM - Asynchronous	Through Hole		55 ns	55 ns
IDT, Integrated Device Technology Inc 7164L20YG	SRAM			20 ns		7.62 mm	28-BSOJ	Parallel	Volatile	64 Kbit	28-SOJ	4.5 V	5.5 V	8 K	SRAM - Asynchronous	Surface Mount	20 ns			70 °C	0 °C	0.3 in

General part information

SRAM - Asynchronous Memory IC 64Kbit Parallel 55 ns 28-CDIP

Technical documentation and resources

No documents available