NTMTS0D4N04CLTXG
ActiveSINGLE N-CHANNEL POWER MOSFET 40V, 553.8A, 0.4MΩ, PQFN 8X8
NTMTS0D4N04CLTXG
ActiveSINGLE N-CHANNEL POWER MOSFET 40V, 553.8A, 0.4MΩ, PQFN 8X8
Description
General part information
NTMTS0D4N04CLTXG
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Technical Specifications
Parameters and characteristics for this part
| Specification | NTMTS0D4N04CLTXG |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 79.8 A |
| Current - Continuous Drain (Id) (Tc) | 553.8 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 341 nC |
| Input Capacitance (Ciss) (Max) | 20600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Length | 8.3 mm |
| Package Name | 8-DFNW |
| Package Width | 8.4 mm |
| Power Dissipation (Max) | 5 W, 244 W |
| Rds On (Max) | 0.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources