DMJ70H900HJ3

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Diodes Inc

MOSFET BVDSS: 651V~800V TO251 TUBE 75PCS

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DMJ70H900HJ3

Active

Diodes Inc

MOSFET BVDSS: 651V~800V TO251 TUBE 75PCS

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Technical Specifications

Parameters and characteristics for this part

Specification	DMJ70H900HJ3

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	603 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	68 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	900 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

DMJ70H600SH3 Series

NRND = Not Recommended for New Design

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Qualification	Package / Case	Grade	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max)
Diodes Inc DMJ70H600SH3	30 V	643 pF	N-Channel	4 V	18.2 nC	AEC-Q101	IPAK TO-251-3 Short Leads TO-251AA	Automotive	11 A	113 W	-55 °C	150 °C	700 V	Through Hole	600 mOhm	MOSFET (Metal Oxide)	10 V
Diodes Inc DMJ70H1D3SH3	30 V	351 pF	N-Channel	4 V	13.9 nC		TO-251-3 Stub Leads IPAK		4.6 A	41 W	-55 °C	150 °C	700 V	Through Hole	1.3 Ohm	MOSFET (Metal Oxide)	10 V	TO-251 (Type TH3)
Diodes Inc DMJ70H900HJ3	30 V	603 pF	N-Channel	4 V	18.4 nC	AEC-Q101	IPAK TO-251-3 Short Leads TO-251AA	Automotive	7 A		-55 °C	150 °C	700 V	Through Hole	900 mOhm	MOSFET (Metal Oxide)	10 V		68 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

DMJ70H600SH3 Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DMJ70H900HJ3

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DMJ70H900HJ3

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Technical Specifications

DMJ70H600SH3 Series

Pricing

Description

DMJ70H600SH3 Series

Documents

Datasheet

Recommended Soldering Techniques

Package PDF

Datasheet

Datasheet

DMJ70H600SH3 Series