SF2004PTH

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 20A TO247AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 20A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	SF2004PTH

Capacitance @ Vr, F	175 pF
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD (TO-3P)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Reverse Recovery Time (trr)	Qualification	Grade
Taiwan Semiconductor Corporation SF2004PT	200 V	150 °C	-55 °C	175 pF	Standard	TO-247-3	1.1 V	TO-247AD (TO-3P)	Through Hole	10 µA	200 mA 500 ns	35 ns
Taiwan Semiconductor Corporation SF2004PTH	200 V	150 °C	-55 °C	175 pF	Standard	TO-247-3	1.1 V	TO-247AD (TO-3P)	Through Hole	10 µA	200 mA 500 ns	35 ns	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 20A Through Hole TO-247AD (TO-3P)

Technical documentation and resources