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ISZ0602NLSATMA1 - BSXXXXXXMA1

ISZ0602NLSATMA1

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Infineon Technologies

OPTIMOS™ PD POWER MOSFET ISZ0602NLS IN THE PQFN 3.3X3.3 PACKAGE OFFERS FAST RAMP-UP AND OPTIMIZED LEAD TIMES.

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ISZ0602NLSATMA1 - BSXXXXXXMA1

ISZ0602NLSATMA1

Active
Infineon Technologies

OPTIMOS™ PD POWER MOSFET ISZ0602NLS IN THE PQFN 3.3X3.3 PACKAGE OFFERS FAST RAMP-UP AND OPTIMIZED LEAD TIMES.

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationISZ0602NLSATMA1
Current - Continuous Drain (Id) @ 25°C64 A, 12 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC
Input Capacitance (Ciss) (Max) @ Vds1860 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.1 W, 60 W
Rds On (Max) @ Id, Vgs7.8 mOhm
Supplier Device PackagePG-TSDSON-8-26
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.90
10$ 1.21
100$ 0.82
500$ 0.65
1000$ 0.59
2000$ 0.55
Digi-Reel® 1$ 1.90
10$ 1.21
100$ 0.82
500$ 0.65
1000$ 0.59
2000$ 0.55
Tape & Reel (TR) 5000$ 0.51
NewarkEach (Supplied on Cut Tape) 1$ 1.88
10$ 1.31
25$ 1.23
50$ 1.15
100$ 1.07
250$ 0.99
500$ 0.91
1000$ 0.80

Description

General part information

ISZ0602N Series

OptiMOS™ PD power MOSFETis Infineon’s portfolio targetingUSB-PDandadapter applications. ISZ0602NLS in the PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction.OptiMOS™ PDfeatures quality products in compact, lightweight packages.

Documents

Technical documentation and resources