Battery to Retain Data. The device is organized as 2048 x 8 bits and utilizes the I2C serial interface. The 47L16 provides infinite read and write cycles to the SRAM while the EEPROM cells provide high endurance non-volatile storage of Data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon power-loss. Data can also be transferred manually by using either the hardware store pin or by software control. Upon power-up, the EEPROM data is automatically recalled to the SRAM. Recall can also be initiated through software control. The unlimited endurance makes the EERAM useful in applications that need to constantly monitor or record data.

Technical Specifications

Parameters and characteristics for this part

Specification	47L16-I/W16K

Access Time	400 ns
Clock Frequency	1 MHz
Memory Depth	2 K
Memory Format	EERAM
Memory Interface (Type)	I2C
Memory Size	2 KB
Memory Type	Non-Volatile
Memory Width	8 bit
Mounting Type	Surface Mount
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-40 °C
Package / Case	Die
Package Name	Die
Technology	SRAM, EEPROM
Voltage - Supply (Maximum)	3.6 V
Voltage - Supply (Minimum)	2.7 V
Write Cycle Time - Page	1 ms
Write Cycle Time - Word	1 ms

47L16 Series

Part	Memory Size	Write Cycle Time - Page	Write Cycle Time - Word	Technology	Package Name	Memory Interface (Type)	Memory Format	Memory Type	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Package Length	Package Width	Clock Frequency	Access Time	Operating Temperature (Max)	Operating Temperature (Min)	Mounting Type	Memory Width	Memory Depth
Microchip Technology 47C16T-E/SN	2 KB	1 ms	1 ms	EEPROM SRAM	8-SOIC	I2C	EERAM	Non-Volatile	5.5 V	4.5 V	0.154 in	3.9 mm	1 MHz	400 ns	125 °C	-40 °C	Surface Mount	8 bit	2 K
Microchip Technology 47C16T-E/ST	2 KB	1 ms	1 ms	EEPROM SRAM	8-TSSOP	I2C	EERAM	Non-Volatile	5.5 V	4.5 V	0.173 in	4.4 mm	1 MHz	400 ns	125 °C	-40 °C	Surface Mount	8 bit	2 K
Microchip Technology 47C16-I/ST	2 KB	1 ms	1 ms	EEPROM SRAM	8-TSSOP	I2C	EERAM	Non-Volatile	5.5 V	4.5 V	0.173 in	4.4 mm	1 MHz	400 ns	85 °C	-40 °C	Surface Mount	8 bit	2 K
Microchip Technology 47C16T-I/SN	2 KB	1 ms	1 ms	EEPROM SRAM	8-SOIC	I2C	EERAM	Non-Volatile	5.5 V	4.5 V	0.154 in	3.9 mm	1 MHz	400 ns	85 °C	-40 °C	Surface Mount	8 bit	2 K
Microchip Technology 47C16-I/SN	2 KB	1 ms	1 ms	EEPROM SRAM	8-SOIC	I2C	EERAM	Non-Volatile	5.5 V	4.5 V	0.154 in	3.9 mm	1 MHz	400 ns	85 °C	-40 °C	Surface Mount	8 bit	2 K
Microchip Technology 47C16-E/ST	2 KB	1 ms	1 ms	EEPROM SRAM	8-TSSOP	I2C	EERAM	Non-Volatile	5.5 V	4.5 V	0.173 in	4.4 mm	1 MHz	400 ns	125 °C	-40 °C	Surface Mount	8 bit	2 K
Microchip Technology 47C16-E/P	2 KB	1 ms	1 ms	EEPROM SRAM	8-DIP 8-PDIP	I2C	EERAM	Non-Volatile	5.5 V	4.5 V	0.3 in	7.62 mm	1 MHz	400 ns	125 °C	-40 °C	Through Hole	8 bit	2 K
Microchip Technology 47C16-I/P	2 KB	1 ms	1 ms	EEPROM SRAM	8-DIP 8-PDIP	I2C	EERAM	Non-Volatile	5.5 V	4.5 V	0.3 in	7.62 mm	1 MHz	400 ns	85 °C	-40 °C	Through Hole	8 bit	2 K
Microchip Technology 47C16T-I/ST	2 KB	1 ms	1 ms	EEPROM SRAM	8-TSSOP	I2C	EERAM	Non-Volatile	5.5 V	4.5 V	0.173 in	4.4 mm	1 MHz	400 ns	85 °C	-40 °C	Surface Mount	8 bit	2 K
Microchip Technology 47C16-E/SN	2 KB	1 ms	1 ms	EEPROM SRAM	8-SOIC	I2C	EERAM	Non-Volatile	5.5 V	4.5 V	0.154 in	3.9 mm	1 MHz	400 ns	125 °C	-40 °C	Surface Mount	8 bit	2 K