RS1M

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MDD

DIODE GEN PURP 1KV 1A SMA

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MDD

DIODE GEN PURP 1KV 1A SMA

Technical Specifications

Parameters and characteristics for this part

Specification	RS1M

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

DIODE GEN PURP 1KV 1A SMA

Part	Mounting Type	Capacitance @ Vr, F	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Reverse Recovery Time (trr)	Speed	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]
MDD RS1M	Surface Mount	15 pF	Standard	150 °C	-55 °C	1 A	1.3 V	DO-214AC, SMA	500 ns	200 mA, 500 ns	5 µA	SMA	1000 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 1A Surface Mount SMA

Technical documentation and resources