IRFP3206PBF

Active

Infineon Technologies

IR MOSFET™ N-CHANNEL ; TO-247 PACKAGE; 3 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsIR Part Numbering System Datasheet

IRFP3206PBF

Active

Infineon Technologies

IR MOSFET™ N-CHANNEL ; TO-247 PACKAGE; 3 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering System Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP3206PBF

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6540 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Rds On (Max) @ Id, Vgs [Max]	3 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFP3206 Series

Part	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IRFP3206PBF	3 mOhm	TO-247-3	6540 pF	60 V	10 V	20 V	TO-247AC	4 V	Through Hole	MOSFET (Metal Oxide)	N-Channel	170 nC	120 A	-55 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.48
		10	$ 2.96
		100	$ 2.10
		500	$ 1.73
		1000	$ 1.63
Newark	Each	1	$ 3.99
		10	$ 3.82
		100	$ 2.34
		800	$ 1.87

Description

General part information

IRFP3206 Series

The IRFP3206PBF is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

Documents

Technical documentation and resources