DMN2075U-7

NRND

Diodes Inc

POWER MOSFET, N CHANNEL, 20 V, 4.2 A, 0.025 OHM, SOT-23, SURFACE MOUNT

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NRND

Diodes Inc

POWER MOSFET, N CHANNEL, 20 V, 4.2 A, 0.025 OHM, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2075U-7

Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds	594.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs	38 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
Diodes Inc DMN2075U-7	38 mOhm	MOSFET (Metal Oxide)	20 V	2.5 V 4.5 V	8 V	Surface Mount	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	N-Channel	4.2 A	7 nC	SOT-23-3	594.3 pF	1 V

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General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources