NE58219-T1-A
ObsoleteCEL
TRANSISTOR BIPOLAR .9GHZ 3-SMINI
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NE58219-T1-A
ObsoleteCEL
TRANSISTOR BIPOLAR .9GHZ 3-SMINI
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | NE58219-T1-A |
|---|---|
| Current - Collector (Ic) (Max) | 60 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 60 |
| Frequency - Transition | 5 GHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-75, SOT-416 |
| Power - Max [Max] | 100 mW |
| Supplier Device Package | 3-SuperMiniMold (19) |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NE58219-T1-A
RF Transistor NPN 12V 60mA 5GHz 100mW Surface Mount 3-SuperMiniMold (19)
Documents
Technical documentation and resources