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BSS84DWQ-7 - SOT 363

BSS84DWQ-7

Active
Diodes Inc

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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BSS84DWQ-7 - SOT 363

BSS84DWQ-7

Active
Diodes Inc

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSS84DWQ-7
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C130 mA
Drain to Source Voltage (Vdss)50 V
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds45 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]300 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs10 Ohm
Supplier Device PackageSOT-363
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.53
10$ 0.33
100$ 0.21
500$ 0.16
1000$ 0.14
Digi-Reel® 1$ 0.53
10$ 0.33
100$ 0.21
500$ 0.16
1000$ 0.14
Tape & Reel (TR) 3000$ 0.09
6000$ 0.09

Description

General part information

BSS84DWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.